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Ted Mooney, P.E. RET
Pine Beach, NJ
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for Metal Finishing since 1989
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Problematic TiW seed layer adhesion on Silicon
May 11, 2011
We use a TiW/Cu seed layer as base for our patterned electroplating.
What we observe is a bad adhesion of the TiW to the Silicon. The stress in the TiW was
optimised before and is low. Are there any ideas/knowledge how to improve this?
engineer - Dusseldorf, Germany
Is it an alloy of Ti and W or is it a two layer coating?How are you depositing TiW on silicon? What is the coating thickness? Deposition of Ti on Si by PVD should not be a problem. But substrate conditions and deposition parameters are also important.
H.R. Prabhakara - ConsultantBangalore Plasmatek - Bangalore Karnataka India
May 16, 2011
November 11, 2011
Hello,
we use a TiW(10%Ti)/Cu-Seed layer as our plating seed layer.
The seed layer is deposited by sputtering and the stress values for the TiW are already quite small. The thickness of the TiW is 100 nm.
- DÈÂsseldorf, Germany
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